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Oxide Reliability: A Summary of Silicon Oxide Wearout, Breakdown, and
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Oxide Reliability: A Summary of Silicon Oxide Wearout, Breakdown, and Reliability Hardcover - 2002

by David J. Dumin (Editor)


First line

The metal-oxide-semiconductor (MOS) transistor was invented in 1960 [1, 2].

Details

  • Title Oxide Reliability: A Summary of Silicon Oxide Wearout, Breakdown, and Reliability
  • Author David J. Dumin (Editor)
  • Binding Hardcover
  • Pages 280
  • Volumes 1
  • Language ENG
  • Publisher World Scientific Publishing Company
  • Date January 31, 2002
  • ISBN 9789810248420 / 9810248423
  • Weight 1.38 lbs (0.63 kg)
  • Dimensions 10.08 x 6.7 x 0.77 in (25.60 x 17.02 x 1.96 cm)
  • Library of Congress Catalog Number 2002279812
  • Dewey Decimal Code 621
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Oxide Reliability: A Summary of Silicon Oxide Wearout, Breakdown, and Reliability (Selected...
Stock Photo: Cover May Be Different

Oxide Reliability: A Summary of Silicon Oxide Wearout, Breakdown, and Reliability (Selected Topics in Electronics and Systems)

by Dumin, David J (Editor)

  • Used
  • Hardcover
Condition
Used
Binding
Hardcover
ISBN 10 / ISBN 13
9789810248420 / 9810248423
Quantity Available
1
Seller
Hull, Massachusetts, United States
Seller rating:
This seller has earned a 5 of 5 Stars rating from Biblio customers.
Item Price
CA$206.86
This seller has not registered with EPR and cannot ship to Germany.

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Description:
Hardcover. Book Condition: Fine. Jacket Condition: Very Good. World Scientific Publishing Company, 2002. 280 pages. Nice Firm Clean copy ! Jacket has 1 short tear. Size: 10 x 6.7 x 0.7. Engineering Science/Nature::Chemistry 6039L
Item Price
CA$206.86
This seller has not registered with EPR and cannot ship to Germany.