Description:
Hardcover. Book Condition: Fine. Jacket Condition: Very Good. World Scientific Publishing Company, 2002. 280 pages. Nice Firm Clean copy ! Jacket has 1 short tear. Size: 10 x 6.7 x 0.7. Engineering Science/Nature::Chemistry 6039L
Stock Photo: Cover May Be Different
Oxide Reliability: A Summary of Silicon Oxide Wearout, Breakdown, and Reliability Hardcover - 2002
by David J. Dumin (Editor)
First line
The metal-oxide-semiconductor (MOS) transistor was invented in 1960 [1, 2].
Details
- Title Oxide Reliability: A Summary of Silicon Oxide Wearout, Breakdown, and Reliability
- Author David J. Dumin (Editor)
- Binding Hardcover
- Pages 280
- Volumes 1
- Language ENG
- Publisher World Scientific Publishing Company
- Date January 31, 2002
- ISBN 9789810248420 / 9810248423
- Weight 1.38 lbs (0.63 kg)
- Dimensions 10.08 x 6.7 x 0.77 in (25.60 x 17.02 x 1.96 cm)
- Library of Congress Catalog Number 2002279812
- Dewey Decimal Code 621
More Copies for Sale
Stock Photo: Cover May Be Different
Oxide Reliability: A Summary of Silicon Oxide Wearout, Breakdown, and Reliability (Selected Topics in Electronics and Systems)
by Dumin, David J (Editor)
- Used
- Hardcover
- Condition
- Used
- Binding
- Hardcover
- ISBN 10 / ISBN 13
- 9789810248420 / 9810248423
- Quantity Available
- 1
- Seller
-
Hull, Massachusetts, United States
- Item Price
-
CA$206.86
This seller has not registered with EPR and cannot ship to Germany.
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Item Price
CA$206.86